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How 3-D integration will challenge and reshape the memory industry?
The memory semiconductor industry is about to go through a period of major technological changes as new integration trends and disruptive
packaging technologies pave the way to the future growth of this industry …
Historically, the DRAM memory market has been mostly driven by computing applications while NOR Flash has been mainly deployed into consumer and communication devices.
More recently, NAND Flash memory has emerged as the most promising solid state storage solution for current consumer devices and is
showing as the best candidate for hard disk drive replacement in the near future.
INTEGRATION IS THE NEXT CHALLENGE
On the other hand, today wireless is growing and enabling new market segments everywhere, (smart-phones, mobile pocket computing devices…).
As a result, CONNECTIVIY and INTEGRATION are now new drivers to deal with. Demand for data is increasing everywhere: Faster pipes, more pipes
(WAN, LAN, PAN), HD multimedia...
Current complexity and concurrency require more than ever higher data capacity, improved power consumption and is stressing existing well
established architectures: new interconnects, integration schemes and packaging technologies are needed to support higher performance,
breakthrough density and low power consumption devices. 3-D IC integration is
showing as a major solution path to tackle these challenges and memories
will be key components in achieving this successful integration.
3-D
INTEGRATION
WILL OPEN
A NEW
APPLICATION
SPACE FOR
MEMORY
MARKET
Yole Developpement has followed the burgeoning 3-D Packaging industry since its early beginning The global economic downturn
is challenging the fast adoption of the “Through Silicon Vias” technology into high volume applications such as low cost memories. However, we are
seeing concrete signs that this market is definitely taking-off, with the first 3-D integrated DRAM memories being shipped this year: we estimate that
about 20 000 wafers of DRAM memory will be shipped with 3D TSV by the end of 2009, with production moving forward to higher volumes in 2010. By 2013, we expect that telecom and computing industries will drive more than 70%
of the volume for 3-D TSV integrated memories.
3-D integration with memories is a hot topic at the moment because of the challenging market conditions and of the important investment needed for building the required infrastructure. As a result, precompetitive
alliances and partnerships may be necessary to drive the risk down while accelerating product adoption. Memory manufacturers, CMOS foundries, OSAT packaging houses, Fab-less IC players and
integrated device manufacturers are all concerned and actively preparing for this ultimate integration.
This new study aims at answering the following questions: What are the end applications driving the use of 3-D integrated memories? Who are the key players doing it? How will it happen? When will the market
ramp up? What is the impact of the current economic turmoil? How big is this 3-D memory market going to be and at which conditions? How will 3D TSV technologies boost new applications and drive the growth
of Flash and DRAM market?
Key
features
of the
report
o
Per application (more than 30
products
screened)
o
Per type of memory (DRAM / SRAM
/ NOR /
NAND
Flash)
o
In Munits shipment and in 300mm
wafer
equivalent
-
Impact of 3-D integration on the
memory
market
and
applications
-
Key
players
strategy
for
3DIC
integration
with
memories
-
Cost
analysis
&
challenges
for TSV
manufacturing:
Companies
cited in
the report:
AMD,
Amkor,
Chartered
Semiconductor,
Dai Nippon
Printing,
Dongbu
HiTek,
Ibiden,
IBM,
IMFlash,
Intel,
Elpida,
Excico,
Freescale,
Fujitsu,
Hynix,
Micron,
Nanya,
NEC,
Numonyx,
Qualcomm,
Renesas,
TSMC,
Texas
Instruments,
Samsung,
SanDisk,
Seagate,
Shinko,
SOITEC /
Tracit,
Sony,
StatsChipPac,
STMicroelectronics,
Spansion, SPIL,
Swissbit,
Tezzaron,
Toshiba,
UMC,
Xilinx,
Ziptronix
and more
…
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